AMD ramps 0.17-micron flash memory products from new joint venture fab

November 5, 2001 – Sunnyvale, CA – Advanced Micro Devices (AMD) has started shipping a family of flash memory products based on 0.17-micron process technology from its newest joint venture fab.

This new technology enables reduced cost and power consumption, according to the company, while increasing levels of performance for target applications. Cellular phones, two-way pagers, PDAs, and automotive applications such as remote diagnostics, theft tracking, GPS navigation, and on-board voice recognition will benefit from the new flash memory devices.

The products are being built in the new JV3 Fab in Aizu-Wakamatsu, Japan. The JV3 Fab was built, qualified and released to production months ahead of schedule. Groundbreaking occurred in June 2000 and volume revenue shipments commenced this quarter. The facility is owned by Fujitsu-AMD Semiconductor Limited (FASL), a joint venture between AMD and Fujitsu.

“Our process technology is timed to hit the `sweet spot’ of the market and enables our customers to gain access to an industry-leading cost structure,” said Walid Maghribi, AMD’s senior VP and president of the company’s Memory Group. “Ramping our advanced 0.17-micron process allows us to offer 64Mb Flash devices for $12.50 today, well below any comparable device on the market.”


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