ASMI unveils new ultralow-k process

November 1, 2004 – ASM International NV, Bilthoven, The Netherlands, has developed a new process that enables porous low-k insulator materials in copper interconnects for 65nm devices.

The “plasma BCB polymerization technology,” developed in partnership with an unnamed semiconductor device manufacturer, deposits a sealing layer with a chemical commonly used in chip packaging processes (ASMI did not identify the chemical), enabling further processing through metal deposition and chemical mechanical polishing. ASMI added that the process will work with most industry-developed low-k PECVD dielectrics and organic spin-on dielectrics.

Customer demonstrations on 300mm wafers will be available in 4Q04, with five shipments expected for device makers in 2005.


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