August 8, 2005 – IBM has announced the availability of its fourth-generation silicon germanium (SiGe) bipolar CMOS (BiCMOS) foundry technology, 8HP. The company reports that the new 130nm technology is applicable to markets such as automobile safety systems; 60GHz WiFi chips for wireless networks; high-speed A/D and D/A converters; and more.
The 130nm SiGe BiCMOS technology is compatible with IBM’s ASIC platform, and includes a radio-frequency (RF) CMOS option to accommodate a variety of RF and mixed-signal applications. The company claims that this technology delivers higher performance, lower power, and higher levels of integration than current 180nm offerings.
Says Bernie Meyerson, chief technologist for the Systems & Technology Group, “Silicon germanium technology is increasingly influencing next-generation consumer devices and applications… Over the years, SiGe revolutionized the wireless industry by providing a high-volume silicon-based technology.” In addition to 8HP, IBM is offering a lower-cost version, called 8WL, that is targeted for wireless applications to enable longer battery life and increased cellular functionality.