NXP develops GaN-on-Si for power semiconductors with Singapore’s A*STAR

June 1, 2012 — Singapore’s R&D organization, A*STAR Institute of Microelectronics (IME) and semiconductor supplier NXP Semiconductors (NASDAQ: NXPI) will collaborate on 200mm gallium-nitride-on-silicon (GaN-on-Si) process and technology development for high-voltage power devices, targeting end use in computing and communications, aerospace and automotive applications.

GaN-on-silicon devices will achieve better cost and scale at larger-diameter wafers. GaN-on-Si combines the higher operating temperature/power/frequency capabilities of GaN with the existing large-wafer supply chain of Si and CMOS wafer fab processes.

The work will be carried out in IME’s state-of-the art 200mm engineering fab, which offers GaN metal organic chemical vapor deposition (MOCVD) capabilities.

The Institute of Microelectronics (IME) is a research institute of the Science and Engineering Research Council of the Agency for Science, Technology and Research (A*STAR). IME’s mission is to add value to Singapore’s semiconductor industry by developing strategic competencies, innovative technologies and intellectual property; enabling enterprises to be technologically competitive; and cultivating a technology talent pool to inject new knowledge to the industry. Its key research areas are in integrated circuits design, advanced packaging, bioelectronics and medical devices, MEMS, nanoelectronics, and photonics. For more information about IME, please visit www.ime.a-star.edu.sg or learn about A*STAR at www.a-star.edu.sg.

NXP Semiconductors N.V. (NASDAQ: NXPI) provides high-performance mixed-signal and standard semiconductors for automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. Additional information can be found by visiting www.nxp.com.

Visit the Semiconductors Channel of Solid State Technology!


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

One thought on “NXP develops GaN-on-Si for power semiconductors with Singapore’s A*STAR

  1. pablo

    Once again…a PR from IME that went to nowhere…always the same style of A*STAR PR template.
    Well at least we did hear in the court trial for the death of Shane Todd (an IME employe found dead in mysterious circonstances) that IME was incapable to develop a GaN programm.
    Dim-Lee Kwong , head of IME, who was smart enough to get the A*STAR funding (originally intended to IMRE, the true GaN expert institute and not at all IME), found himself in court explaining that Huawei did find that IME was not capable to develop a GaN program….(or decided to drop the GaN program just a few weeks after the death of Shane Todd)
    I guess that NXP did find out , after this PR, that Dim-Lee Kwong was nothing that a man selling power point with data results (from IMRE)
    Once again, it shows how Singapore compete with the world, by getting huge public money to fund program for large international company at very low cost contract (cheap dirty since Tax payers are paying the losses) in the aim to say that Singapore is the center of the world for R&D ……what a joke….

    When EE journalist will do a compilation of PR from A*STAR IME and compare the number of IP or IEEE papers that cames out of those PR???It will show that A*STAR IME is a complete failure R&D institute in the hand of the ex Chief of Defence of Singapore…..a scientific bubble built out of thin air with the money from financial tax of banking system of Singapore.

Comments are closed.