ASM debuts 300mm epitaxy and PEALD/PECVD tools for HV transistor fab

July 11, 2012 — ASM International N.V. (NASDAQ:ASMI; Euronext Exchange in Amsterdam:ASM), launched advanced deposition systems for epitaxy, plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced chemical vapor deposition (PECVD). The 2 tools enable high-volume 300mm wafer processing for 20nm and smaller nodes and 3D transistors.

Also read: Semicon West Day 1: FDSOI and TSV R&D with CEA-Leti by Michael A. Fury, Techcet Group

The Intrepid XP is a single-wafer Epi process tool that can be configured with up to four epitaxy reactor modules. The Intrepid XP deposits advanced strained-silicon-based Epi films for transistors with lower power consumption, including 3D transistor designs and sub-20nm node circuits.

ASM also introduced its XP8 system, a high-productivity single-wafer process tool for PEALD and PECVD applications. XP8 accommodates up to 8 chambers for PEALD or PECVD, which can also be integrated together on the same platform. PEALD and PECVD chambers can be clustered on the XP8 to target double and quadruple patterning spacers, low-k, and other semiconductor fab applications. 

ASM International N.V. and its subsidiaries design and manufacture equipment and materials used to produce semiconductor devices. The company provides production solutions for wafer processing (Front-end segment) as well as assembly and packaging (Back-end segment). ASM International’s common stock trades on NASDAQ (symbol ASMI) and the Euronext Amsterdam Stock Exchange (symbol ASM). For more information, visit

Visit the Semiconductors Channel of Solid State Technology!


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.