Category Archives: LEDs

Researchers have developed an ultrafast light-emitting device that can flip on and off 90 billion times a second and could form the basis of optical computing.

At its most basic level, your smart phone’s battery is powering billions of transistors using electrons to flip on and off billions of times per second. But if microchips could use photons instead of electrons to process and transmit data, computers could operate even faster.

But first engineers must build a light source that can be turned on and off that rapidly. While lasers can fit this requirement, they are too energy-hungry and unwieldy to integrate into computer chips.

Duke University researchers are now one step closer to such a light source. In a new study, a team from the Pratt School of Engineering pushed semiconductor quantum dots to emit light at more than 90 billion gigahertz. This so-called plasmonic device could one day be used in optical computing chips or for optical communication between traditional electronic microchips.

The study was published online on July 27 in Nature Communications.

“This is something that the scientific community has wanted to do for a long time,” said Maiken Mikkelsen, an assistant professor of electrical and computer engineering and physics at Duke. “We can now start to think about making fast-switching devices based on this research, so there’s a lot of excitement about this demonstration.”

The new speed record was set using plasmonics. When a laser shines on the surface of a silver cube just 75 nanometers wide, the free electrons on its surface begin to oscillate together in a wave. These oscillations create their own light, which reacts again with the free electrons. Energy trapped on the surface of the nanocube in this fashion is called a plasmon.

The plasmon creates an intense electromagnetic field between the silver nanocube and a thin sheet of gold placed a mere 20 atoms away. This field interacts with quantum dots — spheres of semiconducting material just six nanometers wide — that are sandwiched in between the nanocube and the gold. The quantum dots, in turn, produce a directional, efficient emission of photons that can be turned on and off at more than 90 gigahertz.

“There is great interest in replacing lasers with LEDs for short-distance optical communication, but these ideas have always been limited by the slow emission rate of fluorescent materials, lack of efficiency and inability to direct the photons,” said Gleb Akselrod, a postdoctoral research in Mikkelsen’s laboratory. “Now we have made an important step towards solving these problems.”

“The eventual goal is to integrate our technology into a device that can be excited either optically or electrically,” said Thang Hoang, also a postdoctoral researcher in Mikkelsen’s laboratory. “That’s something that I think everyone, including funding agencies, is pushing pretty hard for.”

The group is now working to use the plasmonic structure to create a single photon source — a necessity for extremely secure quantum communications — by sandwiching a single quantum dot in the gap between the silver nanocube and gold foil. They are also trying to precisely place and orient the quantum dots to create the fastest fluorescence rates possible.

Aside from its potential technological impacts, the research demonstrates that well-known materials need not be limited by their intrinsic properties.

“By tailoring the environment around a material, like we’ve done here with semiconductors, we can create new designer materials with almost any optical properties we desire,” said Mikkelsen. “And that’s an emerging area that’s fascinating to think about.”

After two Semiconductor Strategy Symposiums in Ho Chi Minh City in 2013 and 2014, SEMI announced today that a SEMI Member Delegation will visit the Vietnamese Central Government in Hanoi on September 21-24.  The objective of the SEMI Vietnam Business Delegation is to introduce SEMI Members to key government officials in several important ministries and economic development agencies in Hanoi and provide the opportunity to learn firsthand about new policies, investment and incentive plans in Vietnam. As Vietnam makes progress on its ambitious journey to establish semiconductor fabrication in the country, now is the right time for the government to interact more closely with foreign businesses, and for SEMI Members to understand the full breadth of opportunities available to them.

As an important stepping stone to Vietnam’s high-tech industries development plans towards 2020, Vietnam’s Prime Minister Nguyen Tan Dung agreed in principle to support the country’s first semiconductor wafer fab, managed by Saigon Industry Corporation (CNS). The Prime Minister assigned the Ho Chi Minh City government to appraise and approve the project and oversee project execution. The SEMI delegation will engage with CNS, potential partners and the government around opportunities for foreign equipment and materials companies and on doing business in Vietnam.

The delegation visit will provide a structured but interactive way to meet representatives from the government as well as the Hoa Lac High Tech Park and the Samsung facility in Thay Nguyen, in order to get a full understanding of how to establish a business presence in Vietnam, find local partners and take advantage of the favorable policies available to the technology sector. With Samsung, Intel, LG Semiconductor, ON Semiconductor and other customers already well-positioned in Vietnam, our member companies have the opportunity to fully explore the promising and growing market in Vietnam.

In addition, workforce development and education are critical issues SEMI will discuss with Hanoi officials. SEMI will provide an overview of the SEMI Foundation and its “High Tech U” program and plans to introduce its first High Tech U event in Vietnam in spring of 2016.

The Semiconductor Industry Association (SIA) today commended the launch of the Congressional Semiconductor Caucus. SIA recognized members of the caucus at a reception on Capitol Hill Tuesday evening and honored the caucus’s co-chairs, Sen. James Risch (R-Idaho), Sen. Angus King (I-Maine), Rep. Pete Sessions (R-Texas), and Rep. Zoe Lofgren (D-Calif.).

“Semiconductors form the foundation of America’s technological and economic strength, national security, and global competitiveness,” said John Neuffer, president and CEO, Semiconductor Industry Association. “The Congressional Semiconductor Caucus will provide a venue for Members of Congress and industry professionals to share ideas and work collaboratively to advance policies that preserve and strengthen the semiconductor industry and our country. We applaud Sen. Risch, Sen. King, Rep. Sessions, and Rep. Lofgren for leading the caucus and for their longstanding support of policies that promote growth and innovation.”

Semiconductors are the brains of modern electronics, making possible the myriad devices we use to work, communicate, travel, entertain, harness energy, treat illness, and make scientific discoveries. SIA is the voice of the U.S. semiconductor industry, uniting companies that account for 80 percent of America’s semiconductor production.

The semiconductor industry directly employs nearly a quarter of a million people in the U.S. and supports more than 1 million additional U.S. jobs. In 2014, sales from U.S. semiconductor companies accounted for more than half of the $336 billion in total global semiconductor sales. Semiconductors are America’s third-leading manufactured export, behind aircraft and automobiles. The industry is highly research-intensive, investing one-fifth of revenues in R&D annually – more than any other industry.

“In the semiconductor industry and across the tech sector, innovation is made possible through the hard work and ingenuity of the industry’s scientists and engineers and is aided by smart public policy from the federal government,” Neuffer said. “SIA looks forward to working with members of the Semiconductor Caucus to advance policies that facilitate free trade and open markets, modernize America’s tax system, strengthen America’s technology workforce, advance university research, and protect intellectual property, among other priorities.”

North America-based manufacturers of semiconductor equipment posted $1.51 billion in orders worldwide in June 2015 (three-month average basis) and a book-to-bill ratio of 0.98, according to the June EMDS Book-to-Bill Report published today by SEMI.  A book-to-bill of 0.98 means that $98 worth of orders were received for every $100 of product billed for the month.

SEMI reports that the three-month average of worldwide bookings in June 2015 was $1.51 billion. The bookings figure is 2.6 percent lower than the final May 2015 level of $1.55 billion, and is 3.5 percent higher than the June 2014 order level of $1.46 billion.

The three-month average of worldwide billings in June 2015 was $1.54 billion. The billings figure is 1.0 percent lower than the final May 2015 level of $1.56 billion, and is 16.2 percent higher than the June 2014 billings level of $1.33 billion.

“The June book-to-bill saw slight declines in the three-month averages for both booking and billings compared to May,” said Denny McGuirk, president and CEO of SEMI.  “Both figures, however, are above the trends reported one year ago and the first half of the year has been one of positive growth.”

The SEMI book-to-bill is a ratio of three-month moving averages of worldwide bookings and billings for North American-based semiconductor equipment manufacturers. Billings and bookings figures are in millions of U.S. dollars.

Billings
(3-mo. avg)

Bookings
(3-mo. avg)

Book-to-Bill

January 2015 

$1,279.1

$1,325.6

1.04

February 2015 

$1,280.1

$1,313.7

1.03

March 2015 

$1,265.6

$1,392.7

1.10

April 2015 

$1,515.3

$1,573.7

1.04

May 2015 (final)

$1,557.3

$1,546.2

0.99

June 2015 (prelim)

$1,542.1

$1,506.1

0.98

Source: SEMI (www.semi.org)July 2015

Dr. Gary Patton, CTO and Head of Worldwide Research and Development, GLOBALFOUNDRIES

Solid State Technology today announced that Dr. Gary Patton has joined the Advisory Board for its annual conference and networking event, The ConFab. Dr. Patton is the CTO and Head of Worldwide Research and Development at GLOBALFOUNDRIES. As an advisory board member Dr. Patton will assist with defining the conference theme and inviting industry leaders to attend the event and take meetings with suppliers.

“It’s a great honor to have Gary on the Advisory Board,” said Pete Singer, Editor-in-Chief of Solid State Technology and conference chair for The ConFab. “Gary has tremendous insights into the next generation technology that will be required to move the semiconductor industry forward. He is also well versed in the economics of semiconductor manufacturing, which is the main focus of The ConFab.”

Dr. Patton, who delivered a keynote at The ConFab 2014 and returned as a VIP attendee in 2015, is responsible for the semiconductor technology R&D roadmap, operations, and execution at GLOBALFOUNDRIES. He was previously VP of IBM’s Semiconductor Research and Development Center in East Fishkill, New York.

The twelfth annual ConFab, which will take place June 12-15, 2016 at the Encore at the Wynn in Las Vegas, will focus on the economics of semiconductor manufacturing and design. Attendees will hear about:

  • The outlook for 2016 and 2017.
  • Technical challenges facing the industry, including next generation lithography, 3D integration, and advanced packaging and testing of increasingly complex chips.
  • Opportunities to maximize collaborative efforts between fabs, fabless/design companies, OSATs, and equipment and materials suppliers.
  • The opportunities of high growth markets

Now in its twelfth year, The ConFab is an executive-level conference and networking event for business leaders from the semiconductor manufacturing and design industry. The event featured a high-level conference program, networking events and strategic business meetings with purchasing decision makers and influencers. Learn more at www.theconfab.com.

Scientists studying thin layers of phosphorus have found surprising properties that could open the door to ultrathin and ultralight solar cells and LEDs.

The team used sticky tape to create single-atom thick layers, termed phosphorene, in the same simple way as the Nobel-prize winning discovery of graphene.

Unlike graphene, phosphorene is a semiconductor, like silicon, which is the basis of current electronics technology.

“Because phosphorene is so thin and light, it creates possibilities for making lots of interesting devices, such as LEDs or solar cells,” said lead researcher Dr Yuerui (Larry) Lu, from The Australian National University (ANU).

“It shows very promising light emission properties.”

The team created phosphorene by repeatedly using sticky tape to peel thinner and thinner layers of crystals from the black crystalline form of phosphorus.

As well as creating much thinner and lighter semiconductors than silicon, phosphorene has light emission properties that vary widely with the thickness of the layers, which enables much more flexibility for manufacturing.

“This property has never been reported before in any other material,” said Dr Lu, from ANU College of Engineering and Computer Science, whose study is published in the Nature serial journal Light: Science and Applications.

“By changing the number of layers we can tightly control the band gap, which determines the material’s properties, such as the colour of LED it would make.

“You can see quite clearly under the microscope the different colours of the sample, which tells you how many layers are there,” said Dr Lu.

Dr Lu’s team found the optical gap for monolayer phosphorene was 1.75 electron volts, corresponding to red light of a wavelength of 700 nanometers. As more layers were added, the optical gap decreased. For instance, for five layers, the optical gap value was 0.8 electron volts, a infrared wavelength of 1550 nanometres. For very thick layers, the value was around 0.3 electron volts, a mid-infrared wavelength of around 3.5 microns.

The behaviour of phosphorene in thin layers is superior to silicon, said Dr Lu.

“Phosphorene’s surface states are minimised, unlike silicon, whose surface states are serious and prevent it being used in such a thin state.”

SEMI honored six industry leaders for their outstanding accomplishments in developing Standards for the microelectronics and related industries. The annual SEMI Standards awards were announced at the SEMI Standards reception held last night during SEMICON West 2015. 

2015 SEMI International Standards Excellence Award, inspired by Karel Urbanek

The SEMI International Standards Excellence Award, inspired by Karel Urbanek, is the most prestigious award in the SEMI Standards Program. The 2015 recipient is Dr. Jean-Marie Collard of Solvay Chemicals. The Award recognizes the leadership of the late Karel Urbanek, co-founder of Tencor Instruments and a past SEMI Board of Directors member who was a key figure in the successful globalization of the Standards Program.

Active in SEMI Standards development since 1997, Collard co-chaired the European Chapters of the Gases and Liquid Chemicals Committees since 2003. Under his leadership, the committees created numerous Standards for the semiconductor and solar manufacturing industries.  Collard has been instrumental in ensuring that the standards developed are relevant. He has actively recruited key players in the supply chain to contribute to development efforts, making certain that the published Standards reflect the true needs of the industry.  He also served as co-chair of the European Regional Standards Committee (ERSC) from 2009 to 2013, steering the ERSC through difficult economic times. As ERSC co-chair, Collard was also an International Standards Committee member, and provided valuable, practical input for new proposals, including the current effort to establish virtual meetings.

Collard earned his Master’s degree and Ph.D. in analytical chemistry from the University of Liege, Belgium. He joined Solvay in 1988 and has worked in Belgium, France, and the United States.

Merit Award

The Merit Award recognizes a Standards volunteer major contributions to the semiconductor industry through the SEMI Standards Program. Award winners typically take on a complex problem at the task force level, gain industry support, and drive the project to completion. Matt Milburn of UCT established the Surface Mount Sandwich Component Dimensions Task Force, within the North America Chapter of the Gases Committee, in April 2013 to develop standards for “sandwich” components (components located between substrate and another component). At the time of Task Force formation, these components did not have dimensional standards in place and varied by each manufacturer, resulting in interchangeability issues between manufacturers of functionally equivalent components.  Milburn addressed this problem by leading the successful development of ballot 5595, Specification for Dimensions of Sandwich Components for 1.125 Inch Type Surface Mount Gas Distribution Systems, which was recently approved by the Gases Committee and will be published as SEMI C88-0715.

Leadership Award

The Leadership Award recognizes volunteers who have demonstrated outstanding leadership in guiding the SEMI Standards Program. This Award is presented to individuals who have strengthened the Program through member training, mentoring, and new member recruitment. Frank Parker of ICL Performance Products and Frank Flowers of PeroxyChem have co-chaired the North America Chapter of the Liquid Chemicals Committee for over ten years. During this time, Parker and Flowers have overseen the development of new specifications and analytical test methods for liquid chemicals while keeping the extensive catalog of previously developed liquid chemical standards up-to-date with current industry needs. Their experience and patience has been critical in transforming new volunteers into productive committee contributors, effectively guiding them through the standardization process and minimizing wasted efforts.

Honor Award

The Honor Award is presented to an individual who has demonstrated long-standing dedication to the advancement of SEMI Standards. Dr. Jaydeep Sinha of KLA-Tencor has contributed to the Silicon Wafer Committee for over 15 years and has led the development of numerous metrology standards. In addition to leading the Advanced Wafer Geometry Task Force, Sinha organized several SEMI Standards workshops around the world, recruiting technologists from leading device makers, equipment suppliers, and consortia to educate local audiences on recent developments and future needs in wafer geometry. Sinha also actively works to keep the Silicon Wafer Committee familiar with oncoming industry trends, frequently inviting industry experts to speak at committee meetings on hot topics.

Corporate Device Member Award 

The Corporate Device Member Award recognizes the participation of the user community and is presented to individuals from device manufacturers. Dr. Jan Rothe of GLOBALFOUNDRIES is this year’s recipient. Rothe has been active in SEMI Standards since the mid-2000s, and has led the International E84 (Specification for Enhanced Carrier Handoff Parallel I/O Interface) Revision Task Force since 2007. Rothe’s consistent participation in the Physical Interfaces and Carriers Committee and feedback on ballot proposals has ensured that the customer perspective is reflected in all committee output.

SEMI today announced that Stephen S. Schwartz, CEO of Brooks Automation, and Toshikazu Umatate, senior vice president and general manager of the Semiconductor Lithography Business at Nikon Corporation, were elected as new directors to the SEMI International Board of Directors in accordance with the association’s by-laws.

Four current board members were re-elected for a two-year term: Bertrand Loy, president and CEO of Entegris; Dave Miller, president of DuPont Electronics & Communications; Kyu Dong Sung, CEO of EO Technics; and Xinchao Wang, chairman and CEO of JCET.

Additionally, the SEMI Executive Committee confirmed Yong Han Lee, chairman of Wonik as SEMI Executive Committee chairman, and Tetsuo Tsuneishi, chairman of the Board of Tokyo Electron, Ltd. as SEMI vice-chairman.

The leadership appointments and the elected board members’ tenure become effective at the annual SEMI membership meeting on July 15, during SEMICON West 2015 in San Francisco, California.

“These two distinguished industry leaders will be tremendous assets to the SEMI Board of Directors,” said Denny McGuirk, president and CEO of SEMI. “We also appreciate the continued service of those re-elected to the Board their counsel and wisdom is valued as SEMI responds to new industry challenges, inflections, and opportunities.”

SEMI’s 19 voting directors and 11 emeritus directors represent companies from Europe, China, Japan, Korea, North America, and Taiwan, reflecting the global scope of the association’s activities. SEMI directors are elected by the general membership as voting members of the board and can serve a total of five two-year terms.

SEMI projects three consecutive years of growth in worldwide semiconductor equipment sales according to the mid-year edition of the SEMI Capital Equipment Forecast, released today at the SEMICON West exposition. SEMI forecasts that the total semiconductor equipment market will grow 7 percent in 2015 (reaching $40.2 billion) and expand another 4 percent in 2016 to reach $41.8 billion.

The following results are given in terms of market size in billions of U.S. dollars and percentage growth over the prior year:

SEMI® 2015 Mid-Year Equipment Forecast by Market Region

By Equipment Type

2014 Actual

2015 Forecast

year-over-year

(% Change)

2016 Forecast

year-over-year

(% Change)

Wafer Processing

29.26

32.13

9.8%

33.53

4.4%

Test

3.55

3.45

-2.8%

3.53

2.3%

Assembly & Packaging

3.06

2.80

-8.5%

2.84

1.4%

Other Front-End

1.63

1.77

8.6%

1.89

6.8%

Total (Equipment)

37.50

40.15

7.1%

41.79

4.1%

By Region

2014 Actual

2015 Forecast

year-over-year

(% Change)

2016 Forecast

year-over-year

(% Change)

China

4.37

4.66

6.6%

5.54

18.9%

Europe

2.38

2.71

13.9%

3.41

25.8%

Japan

4.18

4.73

13.2%

4.60

-2.7%

Korea

6.84

8.55

25.0%

9.23

7.9%

North America

8.16

6.45

-21.0%

6.70

3.9%

ROW

2.15

2.16

0.5%

2.31

6.9%

Taiwan

9.41

10.89

15.7%

10.00

-8.2%

Total (Regions)

37.50

40.15

7.1%

41.79

4.1%

Totals may not add due to rounding
Source: SEMI, July 2015; 
Equipment Market Data Subscription (EMDS)

Following strong growth of 18 percent in 2014, the equipment market is poised to continue to expand for the next two years. Key drivers for equipment spending are investments by memory and foundry fabs. Front-end wafer processing equipment is forecast to grow 10 percent in 2015 to $32.1 billion, up from $29.3 billion in 2014.  Test equipment, assembly and packaging equipment are forecast to contract this year, falling to $3.5 billion (-3 percent) and $2.8 billion (-9 percent), respectively.

“Memory and foundry device manufacturers are continuing to invest in leading-edge process technologies to enable mobility and interconnectivity,” said Denny McGuirk, president and CEO of SEMI. “We expect capital spending to post growth throughout the remainder of 2015 and into 2016.”

Taiwan is forecast to continue as the world’s largest spender with $10.9 billion estimated for 2015 and $10.0 billion for 2016. In 2015, South Korea is second at $8.6 billion, followed by North America at $6.5 billion. For 2016, these three regions are expected to maintain their relative rankings.

In 2015, year-over-year increases are expected to be largest for South Korea (25 percent), Taiwan (16 percent), Europe (14 percent), and Japan (13 percent). Projected year-over-year percentage increases for 2016 are largest for Europe (26 percent increase), China (19 percent), South Korea (8 percent), and Rest of World (7 percent).

Researchers at Chalmers University of Technology have developed a method for efficiently cooling electronics using graphene-based film. The film has a thermal conductivity capacity that is four times that of copper. Moreover, the graphene film is attachable to electronic components made of silicon, which favors the film’s performance compared to typical graphene characteristics shown in previous, similar experiments.

Electronic systems available today accumulate a great deal of heat, mostly due to the ever-increasing demand on functionality. Getting rid of excess heat in efficient ways is imperative to prolonging electronic lifespan, and would also lead to a considerable reduction in energy usage. According to an American study, approximately half the energy required to run computer servers, is used for cooling purposes alone.

A couple of years ago, a research team led by Johan Liu, professor at Chalmers University of Technology, were the first to show that graphene can have a cooling effect on silicon-based electronics. That was the starting point for researchers conducting research on the cooling of silicon-based electronics using graphene.

“But the methods that have been in place so far have presented the researchers with problems,” Johan Liu said. “It has become evident that those methods cannot be used to rid electronic devices off great amounts of heat, because they have consisted only of a few layers of thermal conductive atoms. When you try to add more layers of graphene, another problem arises, a problem with adhesiveness. After having increased the amount of layers, the graphene no longer will adhere to the surface, since the adhesion is held together only by weak van der Waals bonds.”

“We have now solved this problem by managing to create strong covalent bonds between the graphene film and the surface, which is an electronic component made of silicon,” he continues.

The stronger bonds result from so-called functionalization of the graphene, i.e. the addition of a property-altering molecule. Having tested several different additives, the Chalmers researchers concluded that an addition of (3-Aminopropyl) triethoxysilane (APTES) molecules has the most desired effect. When heated and put through hydrolysis, it creates so-called silane bonds between the graphene and the electronic component.

Moreover, functionalization using silane coupling doubles the thermal conductivity of the graphene. The researchers have shown that the in-plane thermal conductivity of the graphene-based film, with 20 micrometer thickness, can reach a thermal conductivity value of 1600 W/mK, which is four times that of copper.

“Increased thermal capacity could lead to several new applications for graphene,” says Johan Liu. “One example is the integration of graphene-based film into microelectronic devices and systems, such as highly efficient Light Emitting Diodes (LEDs), lasers and radio frequency components for cooling purposes. Graphene-based film could also pave the way for faster, smaller, more energy efficient, sustainable high power electronics.”