2011 ITRS: DRAM, 3D Flash, MEMS, nano-scaling steal the show

03/01/2012

The Semiconductor Industry Association (SIA) released the 2011 International Technology Roadmap for Semiconductors (ITRS), a roadmap of near-term and long-term challenges and innovations for the semiconductor design and manufacturing industry through 2026.

Several key areas of advancement have been highlighted in the 2011 ITRS, specifically: DRAM and Flash memory, and micro-electro-mechanical systems (MEMS).

Dynamic random access memory (DRAM) technology development will be accelerated, allowing for new higher-performance servers and sophisticated graphics for game consoles. Flash technology, used as memory in mobile computing devices such as digital cameras, tablet PCs and cell phones, will experience accelerated development over the next 2 years. The introduction of three-dimensional (3D) flash technology, beginning in 2016, will bring greater memory capabilities to a range of popular consumer electronics.

The 2011 ITRS also explores the newest possibilities for innovative interconnects, switches, devices, and materials to advance nanotechnology. While the continued scaling down to the nanometer level occurs, innovative designs and models for new applications and products have expanded research and development of MEMS, increasingly included in smartphones, tablets, digital cameras, and numerous other consumer electronic products. Researchers are also increasing attention on RF and analog mixed-signal technologies. ???M.C.

Solid State Technology, Volume 55, Issue 2, March 2012

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