Mattson Technology today introduced the paradigmE® Si for semi-critical silicon etch applications. The latest silicon etch system reinforces the new etch standard created by Mattson Technology’s production-proven paradigmE, which enables customers to meet stringent processing requirements for device manufacturing at leading-edge technology nodes. Multiple paradigmE Si systems are already in customer production.
Built on the paradigmE product architecture, paradigmE Si incorporates enhancements to enable customers to run the chemistries required for poly-silicon applications. The system features Mattson Technology’s proprietary Faraday shield designed to improve etch process control and enhance mean-time-between-clean (MTBC) performance by up to three times over competitive systems. The paradigmE Si also enables true independent control of ion density and energy, providing improved profile control and minimized sputtering to reduce maintenance costs for the lowest cost-of-ownership.
“Customers currently use critical poly etchers to run semi-critical applications—this tool-application mismatch results in a higher cost of ownership,” said Rene George, vice president and general manager of Mattson Technology’s Plasma Products Group. “The paradigmE Si is specifically targeted at semi-critical poly etch applications by providing excellent process performance with over 30% better cost-of ownership advantages over any competitive etch system currently on the market. The introduction of this latest tool to our etch portfolio enables us to serve approximately 30% of the growing silicon etch market, broadens our etch application set and expands our total served available market by over $500 million.”
For more information, contact Mattson at www.mattson.com