Mattson Showcases Advanced Dry-Strip Tools

Mattson Technology Showcases Advanced Product Portfolio at SEMICON West 2011

Mattson Technology sets the dry strip technology/productivity bar with SUPREMA® XP5, based on the production-proven, vacuum-based, high-throughput SUPREMA platform and proprietary Faraday-shielded ICP source technology. The system is designed to deliver the extendibility, performance, CoO and reliability chipmakers require for high-volume production of current/future-generation logic, DRAM and flash memory devices. SUPREMA XP5 provides the most flexible and cost-effective solution for advanced FEOL/BEOL strip applications using oxygen-based process chemistries.

A new etch paradigm, Mattson Technology’s paradigmE® family (paradigmE dielectric and paradigmE Si silicon etch) enables customers to meet stringent processing requirements for device manufacturing at leading-edge technology nodes. The production-proven systems feature Mattson Technology’s Faraday shielded ICP, designed to deliver best-of-class process performance, improve etch process control and enhance mean-time-between-clean performance by >3x over competitive systems. The paradigmE systems enable true independent control of ion density and energy, providing improved profile control and minimized erosion of chamber parts to reduce maintenance costs for the lowest CoO.

Mattson Technology extends its RTP leadership in memory to logic/foundry by delivering reliable, high-productivity, cost-effective RTP tools chipmakers need to address critical thermal processing challenges for advanced device production/development through 2Xnm and beyond. The Helios XP uses our industry-leading low-temperature capability, >15-year patented HotShield™ technology, dual-side and asymmetrical heating (with our unique Differential Energy Control feature) approaches to address pattern-loading effects and deliver repeatable within-wafer/wafer-to-wafer uniformity. Our Millios millisecond anneal arc-lamp-based system processes the entire wafer surface in one millisecond flash and offers enhanced wafer temperature management at higher throughput than alternative approach systems.

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