by Debra Vogler, Instant Insight Inc., Sunnyvale, CA
Speaking at the Tuesday morning SEMICON West TechXPOT South (“Enabling Sub-22nm with New Materials and Processes”), Carlos Mazuré, CTO, Soitec, told attendees of news he had just received from IBM.
Comparing FinFET performance data published at the June VLSI Symposia with fully-depleted SOI (aka ETSOI [extra-thin SOI]), IBM told Mazuré that its benchmark studies show that FDSOI runs much faster than the FinFET. IBM anticipates being able to publish its data at IEDM in December.