Photo Credit; SemiconductorToday.comGermany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p090204, 2013].

Nitride semiconductor transistors are being developed for high-power and high-frequency applications. Producing such devices on silicon would reduce material costs and introduce economies of scale from the larger substrates available (up to 300mm).  Read More