Semiconductors

SEMICONDUCTORS ARTICLES



TSMC's schedule for 450mm mass production -- and lithography is the key

09/26/2012 

During sessions at this month's SEMICON Taiwan, execs from TEL, Lam Research, Applied Materials and KLA-Tencor revealed the latest developments in 450mm technology.

GlobalFoundries tips 14nm FinFETs with 20nm underpinnings

09/25/2012 

GlobalFoundries announced it has developed a 14nm process technology built off its 20nm planar (LPM) process, which it says will offer improved battery life and higher performance vs. other 20nm 2D planar transistors.

Linde adds China N2O plant, expands display gases reach in Asia

09/25/2012 

Linde Electronics has added a new high-purity nitrous oxide (N2O) plant in China's Jiangsu Province to support increased adoption of metal oxide transistors by display manufacturers.

TriQuint to boost GaN power amplifiers for DARPA

09/24/2012 

TriQuint Semiconductor says it has received a $2.7M contract from the Defense Advanced Research Projects Agency (DARPA) to triple the power handling performance of gallium nitride (GaN) circuits.

Chip demand still sliding, hopes for soft 3Q landing and recovery

09/21/2012 

Demand for chip tools fell again in August and is off by -30% from its peak in early summer, fulfilling fears that the second half of 2012 will be sluggish for chipmaking investments, according to the latest data from SEMI.

Hynix joins SEMATECH's EUV mask group

09/21/2012 

SK Hynix has joined SEMATCH's EUV Mask Infrastructure (EMI) partnership to help develop metrology tools for reviewing defects in advanced masks needed for extreme ultraviolet lithography (EUVL).

TSMC integrates Ge on Si in p-type FinFETs

09/20/2012 

At this year’s International Electron Devices Meeting (IEDM), foundry TSMC will describe a heterogeneous epitaxial growth process which for the first time enables Ge to be directly grown on Si.

Horizontal channels key to ultra-small 3D NAND

09/20/2012 

The first working 3D NAND flash memory at sub-40nm feature sizes will be described by Macronix researchers at this year’s International Electron Devices Meeting (IEDM).

RRAM synapses mimic the brain

09/20/2012 

At this year’s IEDM, a team led by Korea’s Gwangju Institute of Science and Technology will detail a high-speed pattern-recognition system comprising CMOS “neurons” and an array of resistive-RAM (RRAM)-based “synapses,” which demonstrated STDP, a brain-like function.

Molybdenum sulfide: the new graphene?

09/20/2012 

Researchers have begun to investigate a new 2D material—molybdenum sulfide (MoS)—which has similar characteristics but offers something graphene doesn’t: a wide energy bandgap, enabling transistors and circuits to be built from it directly.

On-board heaters can self-heal flash memories

09/20/2012 

At the upcoming International Electron Device Meeting, Macronix researchers will describe how they built flash memories that could heal themselves by means of tiny onboard heaters that provide thermal annealing just at the spots where it is needed.

Everspin to unveil highest-density ST-MRAM

09/20/2012 

In an invited paper at the International Electron Devices Meeting, researchers from Everspin Technologies will describe how they built the largest functional ST-MRAM circuit ever built, a 64-Mb device with good electrical characteristics.

Better than FinFETs: Hybrid-Channel SOI

09/20/2012 

At the International Electron Devices Meeting (IEDM) in December, a team led by IBM will report on the world’s first high-performance hybrid-channel ETSOI CMOS device.The researchers built a ring oscillator circuit to benchmark performance that worked even better than FinFETs.

Why IC market growth will expand despite economic and technology challenges

09/20/2012 

Even with the persistent troubles in global economics and various technology hurdles in advanced semiconductor manufacturing, IC market growth will continue to improve -- and the key is a shift away from what's been driving the market dynamics, explains IC Insights.

China's IMR orders Aixtron system for carbon nanotube, graphene research

09/20/2012 

The Institute of Metal Research (IMR) at the Chinese Academy of Sciences has ordered a new Aixtron tool to support its research in carbon nanotubes and graphene technologies.

Semi-Gas uncrates gas mixture automation system

09/20/2012 

Semi-Gas Systems is now offering an automatic gas sampling system that eliminates operator touch time while certifying cylinders of blended gas mixtures.

Brooks Automation laying off 10% of workforce

09/19/2012 

The semiconductor equipment maker is battening down the hatches to reduce costs and improve profitability in the face of near-term macroeconomic conditions.

X-Fab offering MEMS 3D inertial sensor process

09/19/2012 

X-Fab Silicon Foundries has debuted an open-platform MEMS 3D inertial sensor process, what it claims is the first to be made available directly from a high-volume pure-play foundry.

LFoundry to invest EUR 25 million in R&D

09/19/2012 

LFoundry says it will invest a total of €25 million in R&D and innovative projects over the next three years, thanks to " the materialization of several large-scale projects."

Process Watch: Taming the overlay beast

09/18/2012 

In the fourth installment in a series called Process Watch, the authors discuss overlay registration and new capabilities to align to buried layers. Authored by experts at KLA-Tencor, Process Watch articles focus on novel process control solutions.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

Sponsored By:

Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

Sponsored By:

More Webcasts