Product — March 16, 2000 — Ibis Technology Improves Implanter Through New Ion Source

DANVERS, Ma— In December, Ibis will add an RF inductively coupled ion source to improve throughput of its Ibis 2000 SIMOX-SOI implanter, used in silicon-on-wafer semiconductor manufacturing. Anticipating a 20 percent increase in throughput for its implanter, currently under development at the University of California, Ibis officials say they expect the new technology will also extend their product's maintenance intervals.

By Lisa Nadile


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