Tegal Awarded Patent for Etching Sub 0.15 Micron ICs

PETALUMA, Calif.&#151May 30, 2000— Tegal Corp. today announced that it has received a patent for a process that minimizes critical dimension growth on a semiconductor wafers. The company announced that it has been granted United States Patent No. 6,046,116, for minimizing critical dimension growth on a semiconductor wafers. The `116 patented method uses a combination of wafer heating and process controls to enable production of devices such as microprocessors, magnetic RAM (MRAM), DRAM, ferroelectric memories (FeRAM) and next generation system-on-a-chip products, Tegal said.

By pennNET Staff

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