Micron Samples 1.8V Flash and SRAM Combination Device

BOISE, Idaho—June 7, 2000—Micron Technology Inc. today announced samples of a new low-power memory architecture using stacked technology to combine both Flash and SRAM on one memory device.

By pennNet Staff


Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.