New Low-Power IGBT Aims to Simplify Gas Discharge Lamp Design

GENEVA, SWITZERLAND—June 23, 2000—Designed for use in high-intensity gas discharge lamps for the automotive industry, STMicroelectronics has released a 3-A, 600-V insulated gate bipolar transistor (IGBT). The transistor combines low on-voltage drop (VCEsat), low gate charge, and an integrated freewheeling diode in a compact DPAK (TO-252) form factor.

By pennNET Staff


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