FREMONT, Calif.—Aug. 18, 2000—AXT today announced the availability of 780-nm and 850-nm vertical cavity surface-emitting laser wafers suitable for ion-implantation and other oxidation processes.
By Jason Rothman
FREMONT, Calif.—Aug. 18, 2000—AXT today announced the availability of 780-nm and 850-nm vertical cavity surface-emitting laser wafers suitable for ion-implantation and other oxidation processes.
By Jason Rothman
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