DURHAM, N.C.—Aug. 21, 2000—Claiming an industry first, Cree Inc. recently demonstrated a 10-GHz RF power performance from a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
By pennNET Staff
DURHAM, N.C.—Aug. 21, 2000—Claiming an industry first, Cree Inc. recently demonstrated a 10-GHz RF power performance from a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).
By pennNET Staff
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