Infineon Announces SiGe BiCMOS Process Technology

Munich, Germany–Oct. 17, 2000–Infineon Technologies AG has pioneered a new silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) technology, known as B7HFc.

“This innovation in chip manufacturing illustrates our technological strength and expertise in providing solutions for next-generation mobile communications,” says Maurice van Riek, vice president and general manager of Infineon’s Radio Frequency ICs Business Unit. “By addressing the specific requirements of higher operating frequencies, reduced power consumption, and increased levels of integration, our SiGe BiCMOS technology provides an ideal basis for future mobile communication and wireless Internet standards such as 2.5G, 3G, and HiperLan.”

Infineon’s B7HFc technology was developed specifically to meet the requirements of mobile communication systems and high-speed data transmission standards. The process combines state-of-the-art RF bipolar transistors with transit frequencies up to 75 GHz and an advanced analog 0.35-micron CMOS process.

To demonstrate the technology’s ability to support high-speed, low-power integrated circuit (IC) designs for mobile communication applications, Infineon used the B7HFc process to create a 10 GHz phase locked loop (PLL).


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