Greensboro, North Carolina–Oct. 9, 2000–RF Micro Devices (RFMD), a provider of proprietary radio frequency integrated circuits (ICs) for wireless communications applications, recently announced plans to develop and manufacture ICs using indium phosphate (InP)–a next generation semiconductor process technology.
Indium phosphate is viewed by industry experts as having performance characteristics superior to those of existing process technologies, according to the company, such as better thermal characteristics, higher frequency response, and lower threshold voltages.
“RFMD has demonstrated excellence in the epitaxial growth and wafer fabrication of GaAs-based, HBT ICs. The manufacture of InP-based, HBT ICs fits nicely into our facilities and equipment, and leverages our core competencies within the manufacture of compound semiconductor ICs,” says Art Geissberger, RFMD vice president of wafer fabrication operations.
The company expects to have sample InP devices in approximately 1 year, and anticipates production volumes in approximately 18 months.