Santa Clara, California–IXYS Corp. has been awarded U.S. Patent No. 6,107,674 for its chip-on-chip technology, which the company says enables a new level of integration for smart power semiconductors.
“This new technology enables a higher packing density of components, by utilizing the top surface area of the power chip for mounting ICs–thus saving space and reducing the cost of a power electronic circuit like a power supply or a motor drive,” explains IXYS CEO Dr. Nathan Zommer. “A smart power switch, which controls 6,000W of power, 12A and 500V, occupies a chip area of about 0.25-inch on a side. The multi-layer structure of insulator and metal covered by our patent provides the proper voltage isolation and circuit connectivity.”
The IXYS technology teaches a power semiconductor device structure–in which the power semiconductor chip is used as the substrate onto which other control and driver chips are bonded–to form a fully integrated power circuit. This opens up a new level in power integration on the third dimension, according to the company, creating third dimension power integrated devices.
The technology is designed to integrate low voltage control and driver ICs with high voltage power semiconductors rated up to 3,000V, and can reach the 10,000W range. Newly integrated devices are no larger than the power chip itself, reports IXYS.