TOKYO — Nov. 28, 2000 — Elipda Memory Inc. plans to construct a 300 mm wafer fab, complete with an approximately 190,000 square foot cleanroom, near NEC Hiroshima, Ltd. Construction is expected to begin in January.
Production of 256 megabit dynamic random access memory devices in a 0.13-micron process is expected to begin by mid-2002. Officials expect maximum capacity to reach 20,000 wafers per month, or the equivalent of 48,000 wafers at 200 mm diameter.
The facility will a have a total floor space of approximately 236,800 square feet.
Elipda is investing approximately $1.5 billion to build the new fab, while NEC Corporation and Hitachi will invest an additional $182 million in Elipda for the creation of the facility's shell. Elipda was established as a joint venture between NEC and Hitachi in 1999.
Once the project is completed, it is believed that Elipda will be Japan’s only dedicated DRAM manufacturer.