Kyma develops 2-inch GaN epitaxial substrate

Research Triangle Park, North Carolina–Nov. 6, 2000–Kyma Technologies, a developer and supplier of nitride substrates, has developed a 2-inch-diameter, 50-micron-thick epitaxial gallium nitride (GaN) layer on a sapphire wafer, to be used as the core technology for a variety of applications within the semiconductor, optoelectronic, and communications industries.

GaN substrates result in fewer processing steps and improved device quality, reports Kyma, for manufacturers that rely on the wafers as the core technology for GaN-based wide bandgap semiconductor devices.

Examples of GaN-based device applications that will be enhanced by the use of larger GaN substrates include short wavelength semiconductors lasers, high brightness visible and ultraviolet (UV) LEDs, advanced communication components, solar blind UV photodetectors, and high-power semiconductor devices.

Kyma will begin shipment of samples to device developers by the end of the year, with production quantities becoming available in early 2001.


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