Sarasota, Florida–Nov. 8, 2000–Sterling Semiconductor, Inc., a subsidiary of Uniroyal Technology Corp., is installing additional silicon carbide (SiC) production equipment to increase its SiC wafer production by a factor of 10 in 2001. The company has also announced plans to add additional crystal growth furnaces–to make SiC crystals that can be sliced into wafers–to expand their research and development effort.

“Increasing the capacity of Sterling’s SiC wafer production is one of the key elements of Uniroyal’s investment in SiC,” says Robert L. Soran, president and CEO of Uniroyal. “We continue to be encouraged by the fact that the demand for SiC products exceeds supply, and this expansion is intended to meet the needs of customers requiring 4H, 6H, and semi-insulating SiC wafers. Wafers will also be used internally by Sterling for the development of SiC devices.”