Hillsboro, Oregon–Nov. 3, 2000–Sumitomo Electric Industries, Ltd., of Japan, has announced plans to build its first U.S. fab in Hillsboro, Oregon. Production at the new fab initially will focus on 150mm gallium arsenide (GaAs) wafers used in wireless communications devices. A second phase expansion to produce larger diameter indium phosphide (InP) wafers is planned.
Total investment for the first phase of the project will be $20 million, with the potential for an additional $70 million expansion as demand in wireless markets increases.
Construction of the fab is scheduled to begin in November 2000, with test production expected by August 2000. The fab is expected to enter full production by the end of 2001.