Infineon, IMEC pursue CMOS technology process developments

Munich, Germany–Infineon Technologies AG has extended its collaboration with IMEC, a Leuven, Belgium-based R&D center, in the fields of microelectronics technology and design- and system-oriented research.

The collaboration will address critical CMOS technology process developments. A research program on high-k gates aims to develop gate dielectrics and gate electrodes for sub-100nm devices, while another research program will be performed on interconnection technologies based on the use of low-k materials and Cu. The organizations further plan to target the optimization of silicide processing aspects and shallow junction formation for industrial processes, and will jointly develop optimized cleaning strategies and cleaning concepts.

Infineon and IMEC will also collaborate on a joint lithography program aimed at extending the limit of optical lithography into the sub-100nm region. This program will focus on research of very deep UV-lithography processes with 157-nm optical wavelength.

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