Mitsubishi plans 300mm fab

Tokyo, Japan–Mitsubishi Electric’s President Ichiro Taniguchi announced yesterday that the company is planning to invest 200 billion yen (US$1.72 billion) to build a 300mm fab, which is expected to become operational in 2003, in Kochi Prefecture on Shikoku Island. The company intends to incorporate 0.15- and 0.13-micron process technologies in 2003, followed by 0.10-micron process technology in 2005.

Mitsubishi will initially spend 10 billion yen (US$86 million) during FY2001 on construction of the fab, which will be located adjacent to its existing Kochi Plant 200mm fabs. The company is reportedly asking Matsushita (Panasonic) Group, Mitsubishi’s partner for system LSI device and process development, to share the investment of the 300mm fab.

Equipment installation is scheduled to begin in 2002, and Mitsubishi expects the fab to reach full capacity–25,000 to 30,000 wafers per month–in 2005.

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