SST and Vanguard enter deep submicron foundry agreement

Sunnyvale, California–Silicon Storage Technology, Inc. (SST) and Vanguard International Semiconductor Corp. have entered an agreement in which Vanguard will serve as a foundry for SST’s 0.18- and 0.13-micron flash memory products based on the company’s advanced self-aligned SuperFlash memory technology.

“This relationship allows SST to secure additional deep submicron capacity, which is strategically important to us as we expand into higher density flash markets,” says Bing Yeh, president and chief executive officer of SST. “By using our self-aligned SuperFlash cell, we are on a very aggressive migration path to cutting-edge process geometries of 0.18-micron and below. Vanguard’s new focus as a memory foundry and the company’s success in implementing an advanced technology roadmap compliments SST’s goal of continuously acquiring leading-edge wafer capacity for our projected growth.”

Vanguard will manufacture SST’s flash memory chips at its facility in Hsinchu, Taiwan. Initial wafer production is scheduled to start during the fourth quarter of 2001, followed closely by volume production in early 2002.


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