TSMC chooses Applied Materials’ low-k dielectric for copper ICs

Hsinchu, Taiwan–Taiwan Semiconductor Manufacturing Co. (TSMC) has selected Applied Materials, Inc.’s Black Diamond chemical vapor deposition (CVD) low-k film for production of its 0.13-micron copper chips. TSMC is also working with Applied Materials to extend Black Diamond technology to its next-generation 0.10-micron devices that are currently in development.

Applied Materials’ Black Diamond process is designed to enable chipmakers to rapidly and cost-effectively incorporate a low-k dielectric into their copper interconnect structures using conventional CVD equipment and Si-based materials.

“An economical, production-worthy low-k dielectric is one of the key requirements for realizing the potential of copper chip technology for increased speed and lower power consumption,” says Dr. F. C. Tseng, president of TSMC. “Applied Materials’ Black Diamond low-k film meets this requirement. We are also confident in this product’s extendibility to multiple generations of devices, including those that will be made in our 300mm fabs, which will begin volume production this year.”


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