FEB. 2 Petaluma, California–Tegal Corp. has been awarded two U.S. patents covering novel reactor components that enable etching of materials associated with the production of next-generation devices such as DRAM, FeRAM, MRAM, MPUs, and system-on-a-chip products.

The patented reactor components are used when performing an etch or other process step required to manufacture sub-0.13-micron devices with materials such as cobalt, copper, iridium, manganese, platinum, rutherium, and high-k dielectric materials such as BST, PZT, and SBT.

“Control and maintenance of reactor surfaces is critical when producing sub-0.13-micron devices,” says Steve DeOrnellas, chief technical officer and vice president of Tegal. “These patents enable the active management of the material transport processes taking place within the reactor during etch.”

The patents–No. 6,170,431 and No. 6,173,674–have been filed under the Patent Cooperation Treaty to ensure worldwide coverage.