Dow achieves ultra low-k dielectric material with k=2.0

March 5, 2001–Midland, Michigan–Dow Chemical Co. today announced a breakthrough in the development of SiLK semiconductor dielectric resin for 100nm chip designs and beyond, achieving a viable ultra low-k material with k=2.0. The porous, spin-on film will enable the continued miniaturization of ICs to improve their speed and performance.

Dow reports that the mechanical properties of SiLK have performed well in various evaluations–including CMP of bulk films–exhibiting two to three times the toughness of competitive materials with a comparable dielectric constant.

“Chipmakers are already looking to low-k materials for 100nm device production because extendibility is a decisive factor in their material choice at 130nm,” says Mark McClear, business director of Dow’s Semiconductor Fab Materials group. “Process technology must be extendible to multiple device generations to maximize chipmakers’ return on investment. With this research breakthrough, Dow fulfills its commitment to our customers and the rest of the industry that SiLK resin can transition forward over the next several technology nodes.”

Sample films of the new resin will be available for testing and process module development during 2Q01. Dow also expects to begin commercial production of the material later this year.


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