PRINCETON, N.J. — Sensors Unlimited, Inc., a supplier of InGaAs technology that advances the performance of optical networks, has developed the SU-10PSR, a 10 Gb/s PIN receiver for advanced optical networks.
Sensors’ high-speed optical receivers support high-bandwidth DWDM, SONET/SDH, transponders and long-haul/metro system applications.
“Our long history and expertise with Indium Gallium Arsenide (InGaAs) and state-of-the-art optical component design, fabrication and supply, uniquely position us to deliver high performing optical receivers with long-term reliability,” said Greg Olsen, president of Sensors Unlimited. “We have applied Sensors’ proven success with InGaAs technology to our 10 Gb/s receivers, enabling system vendors to build next-generation systems that will meet the growing demand for increased capacity in high-speed optical networks.”
“As optical networks push for higher and higher capacities, demand for high-speed optical components such as optical receivers continues to grow,” said John Lively, director, Optical Components at RHK, Inc. “RHK estimates the market for 10 Gb/s receivers for DWDM and SONET/SDH applications will exceed $500 million this year, and will grow to over$1 billion by 2004. Sensors is one of a select group of suppliers with the requisite III-V semiconductor expertise to deliver these components.”
Sensors Unlimited’s optical receiver features low ripple, low group delay, high PIN responsivity and high sensitivity, which reduce the need for optical amplification. The SU-10PSR is in a hermetically sealed package, which ensures long-term reliability, integrates an InGaAs pin diode with a Gallium Arsenide HBT preamplifier and complies with the standard requirements of OC-192/STM-64 SONET/SDH systems. Other features include an SMA electrical output connector, low dark current, low capacitance, high overload, and wide bandwidth.
Sensors Unlimited’s technical capabilities include a class 1,000/100 cleanroom for complete device processing and testing of III-V compound detectors and lasers. Facilities include photolithography, dielectric deposition, thermal and e-beam metal deposition, p-contact diffusion and annealing, chip dicing and automatic probing. Test facilities include infrared detector testing and automated laser diode characterization in wavelength range 0.65 microns – 5 microns.