Infineon introduces 1300nm Vertical Cavity Surface-Emitting Lasers

April 9, 2001 – Munich, Germany – Infineon Technologies says it has achieved a breakthrough in 1300nm Vertical Cavity Surface-Emitting Laser (VCSEL) technology. Until now, 1300nm lasers were available only in edge-emitting laser technology. According to Infineon, 1300nm VCSELs extend the potential range of fiber optic systems, providing inherent cost, reliability and power advantages compared to edge-emitting laser technology.

The new VCSELs can be modulated up to 10GHz, providing the output power required for fiber optic transmission systems operating at OC-192 data rates (10 Gigabits/second). Designers can reduce their overall systems complexity and systems costs as well as improve systems performance, the company said.

Infineon used its molecular beam epitaxy technology and production of 850nm VCSEL components for developing the 1300nm technology. The vertically emitting laser is grown on a Gallium Arsenide substrate and has an active region consisting of multiple quantum wells of Indium Gallium Arsenide Nitride.

Development work for the new technology was performed at the company’s Corporate Research Center and financially supported by the European Union and the German Ministry of Education and Research.

Infineon 1300nm VCSEL samples will be available in 2002.


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