Nikon introduces ultra-high NA ArF Scanner

June 29, 2001 – Belmont, CA – Nikon Precision Inc. (NPI) has announced its fourth-generation lens-based 193nm scanner designed to meet the stringent manufacturing requirements for 100nm semiconductor devices.

Called the S306C, the new system is the world’s first argon fluoride (ArF) scanner to incorporate a 0.78 ultra-high numerical aperture (NA) lens, according to Nikon. It achieves a throughput of more than 135 200mm wafers/hour and over 85 300mm wafers/hour, making it one of the highest productivity tools in the industry, Nikon said.

“The Nikon S306C is designed to meet the rigid requirements for next-generation DRAMS and logic devices,” states Frank Masciocchi, VP of sales and marketing for NPI.

Nikon said the S306C, a 1:4 reduction system, achieves a resolution of 120nm. By utilizing SHRINC, Nikon’s illumination and resolution enhancement technology, it realizes a resolution of 100nm or better, the company said. Additionally, the company reported that the system’s three-sigma alignment accuracy is better than 23nm. The newly developed body minimizes the effects of vibration and temperature on operation, according to Nikon. The company will begin accepting orders for the new system in spring 2002.


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