August 16, 2001 – Fujitsu says it will move to a 0.35-micron, one-transistor, one-capacitor (1T1C) FeRAM by spring of 2002, and a 0.18-micron version by the middle of 2003.
This spring it started production of a 0.35 micron, two transistor, two capacitor (2T2C) product.
The 0.35-micron 1T1C version shrinks cell size in half, to 6.7 square microns. Fujitsu says the smaller chips will bring down FeRAM costs enough to replace E2PROMs and SRAMs.
It plans to skip the 0.25-micron generation and jump next to 0.18- micron, which will shrink cell area to 1.5 square microns. The 0.35- micron FeRAM will have 3 layers, the 0.18-micron version 5 layers.