Sterling Semiconductor unveils 3-inch SiC substrate

Sterling Semiconductor Inc., a subsidiary of Uniroyal Technology Corp., will begin customer sampling of its new 3-inch diameter silicon carbide (SiC) substrate.

Sterling will introduce the substrates at the International Conference on Silicon Carbide and Related Materials (ICSCRM) in Tskuba, Japan.

Sterling is a producer of SiC substrates used to make advanced semiconductor devices for applications such as wireless communications, industrial process control, and power electronics. SiC is best suited for applications that require performance levels exceeding those of silicon and gallium arsenide-based electronic devices.

Currently, silicon carbide substrates available in the market are 2 inches in diameter. The expansion to 3-inch substrates will provide increased yields and greater cost efficiencies for electronic device manufacturers, Sterling claimed.

The new 3-inch substrates that will be sampled with customers are of the 6H polytype conducting material. Sterling plans to continue its wafer expansion efforts with the development of 3-inch diameter 4H polytype conducting substrates and semi-insulating substrates.


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