October 18, 2001 – Hillsboro, OR – TriQuint Semiconductor Inc. announced the introduction of the TQM7136 SiGe HBT Cell-Band CDMA Power Amplifier Module.

This module is targeted for the fast growing US, Korean, South American, and Chinese CDMA phone markets. The advanced features of the TQM7136 are made possible by SiGe HBT power amplifier die developed within the CDMA345 joint development project between TriQuint and Atmel. Excellent RF performance was achieved by utilizing Atmel’s SiGe semiconductor process, according to the company. A companion PCS-Band CDMA power amplifier module, the TQM7636, is scheduled for release later in 4Q01.

According to TriQuint, the TQM7136 power amplifier module maximizes mobile phone talk time by allowing the phone designer to dynamically vary the module’s power setting as the phone traverses the CDMA network. The module allows rapid development of handset platforms because it requires few external components and it incorporates a CMOS compatible logic interface. The CMOS interface allows the TQM7136 to be controlled directly with low-voltage CMOS microprocessors without the need for additional circuitry required today by many competing solutions.

Strategic customer sampling started in 3Q01 and will continue through the scheduled start of high volume manufacturing release in 4Q01. The new power amplifier module is part of the CDMA product series being developed as part of the CDMA345 joint development project with Atmel. The technology behind the CDMA345 product family has evolved through years of R&D and custom product development in the RF marketplace by both TriQuint and Atmel, and through the collaborative efforts of TriQuint and Atmel to jointly develop IC technology for the CDMA marketplace.