November 7, 2001 – Austin, TX – GSI Technology has formed a relationship with Taiwan Semiconductor Manufacturing Co. (TSMC) for volume production of GSI’s latest line of high speed 18Mb Burst and NBT synchronous SRAMs.
The RAM for this latest part cycles at 333 MHz in Pipeline mode and demonstrates a 4.3ns access time in Flow Through mode, GSI said. These new 18Mb Sync SRAM die will be manufactured using TSMC’s 0.13-micron CMOS process.
The new 18Mb SRAMs are the latest addition to the family of SRAMs that GSI manufactures in TSMC fabs. GSI’s 6ns 1Mb thru 4Mb Async SRAM product line is produced in TSMC’s 0.25-micron process and GSI’s 3.3V and 2.5V Sync SRAM product line, including 2Mb thru 16Mb versions, is manufactured in TSMC 0.25-micron and 0.15-micron processes at speeds up to 250MHz.