Jan. 22, 2002 – Campbell, CA – Silicon Genesis Corp. (SiGen), a developer of SOI wafer technologies, and Umicore, a Belgian-based metals and materials supplier, are collaborating to manufacture thick silicon-on-insulator wafers for electronic, photonic, and MEMS applications.
The thick-SOI wafers incorporate device layers ranging from 10 to several hundred microns thick with buried oxide layers typically a micron thick, the companies said.
The partnership will combine the SiGen capabilities for plasma-activated wafer bonding and oxidation with the Umicore expertise in precision grinding and polishing for the production of thick-SOI wafers with diameters of 100-, 125- and 150mm.
Although initially the operation will focus on silicon-based SOI wafers, with an installed capacity of 50,000 wafers/year, Umicore’s experience in germanium and III-V compound semiconductor wafers, as well as other advanced materials, will provide a base for the development of advanced heterostructure materials. The thick-SOI wafers are being marketed and sold by both partners.