Chartered, Shanghai Tsinghua tout first silicon

Chartered Semiconductor Manufacturing and startup IC house Shanghai Tsinghua Chip Crystal Microelectronics Co. announced first silicon for a 2.4 GHz RF transceiver chip manufactured with Chartered’s 0.18-micron RF CMOS process.

Chartered’s high-performance and cost-effective RF CMOS process capabilities are targeted by Shanghai Tsinghua Chip (a design house funded by Tsinghua University) for wireless local area networks (LAN) applications. Using the RF CMOS design kit provided by Chartered, Shanghai Tsinghua Chip achieved first-pass design success and accelerated the development cycle for its product prototypes.

As part of its comprehensive wireless LAN product roadmap, Shanghai Tsinghua Chip will unveil a prototype wireless system at the 4th Shanghai International Industry Fair to be held in Shanghai in November 2002.

Chartered’s 0.18-micron RF CMOS process used to produce the chip for Shanghai Tsinghua Chip features a core voltage of 1.8 and I/O voltage of 3.3 volts. The process achieves extremely high performance with peak fT of 60 GHz and peak fmax of 65 GHz. By utilizing a triple-well module, Chartered’s RF CMOS and mixed-signal processes have also demonstrated a 25 dB noise reduction in substrate coupling, which is a significant improvement over the traditional twin well process.


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