Tru-Si, OSE-USA sign JD for thin-wafer development

March 6, 2002 – Sunnyvale, CA – Tru-Si Technologies Inc. and OSE-USA have signed a joint development agreement to create strong, ultra-thin microchip die that can be stacked and interconnected with up to four die per package, with very high yields in volume manufacturing.

A developer of wafer-thinning processes and applications, Tru-Si will utilize its processing knowledge and proprietary equipment for dry plasma etching to produce silicon wafers that are thinned to 100 microns or less, the company said.

OSE-USA, a provider of technology IC package assembly and manufacturing services, will develop the specialized dicing, mounting, and bonding processes for interconnecting the thinned die into conventional ball gate array packages.


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