June 20, 2002 – Migdal Haemek, Israel – Tower Semiconductor Ltd. has signed an agreement with a Japanese semiconductor manufacturer for the joint development of 0.18-micron embedded microFLASH technology.
Tower will use the developed technology in providing semiconductor foundry services at its Fab 2 facility and by Tower’s development partner in its own semiconductor business.
Yoav Nissan-Cohen, Tower Co-CEO stated, “The joint development efforts enable Tower to accelerate the development of its 0.18-micron embedded microFLASH technology to be offered at our new Fab 2 facility, thereby enabling Tower to take full advantage of the expected upturn in the market.”
Based on Saifun NROM technology, Tower’s flash architecture stores two bits in each cell, doubling memory density, according to Tower. The production of microFLASH modules is compatible with standard CMOS processes.