Tokyo, Japan – Hoya Corp., an advanced glass products manufacturer, plans to establish a new company, Hoya Advanced Semiconductor Technologies Co. Ltd., at Akishuma-shi, Tokyo, for the development and production of silicon carbide wafers.
About 2.5 billion yen has been invested in facilities installation. The company is planning to reach about 4 billion yen in sales in 2007.
The SiC wafer developed by Hoya Corp. was made using a hot-wall-type low-pressure reactor, into which SiH2Cl2 and C2H2 are fed alternately, resulting a 3C-SiC grown heteroepitaxially on Si (001) substrate. The technique has been receiving a lot of interest because the semiconducting material can be used for higher performance applications.
Hoya Corp. has also been developing a mask and mask blank businesses for the semiconductor industry. However, it wants to enter the wafer or semiconductor business through the new company.