Chartered offers SiGe BiCMOS technology

Sept. 4, 2002 – Singapore – Chartered Semiconductor Manufacturing has penned a joint technology agreement with IMEC, a European independent R&D center for microelectronics, that will result in Chartered offering 0.18-micron silicon germanium (SiGe) BiCMOS manufacturing capabilities by 2H03.

Chartered joins IMEC’s Industrial Affiliation Program on 0.18-micron BiCMOS process integration that targets the development of manufacturable, fully integrated BiCMOS technology optimized for low power, low noise RF applications in the 2 to 5GHz frequency range.

Under the terms of the non-exclusive agreement through IMEC’s Industrial Affiliation Program, IMEC will be licensing its 0.18-micron silicon germanium-based bipolar module to Chartered, along with the test chip structures and bipolar model.


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