248nm bilayer resist system

Aug. 30, 2002 – Marlborough, MA – Shipley Co. LLC’s SiBER is an ultrahigh-resolution, 248nm, silicon bilayer resist system that is composed of a silicon-containing top imaging layer and a planarizing, light-absorbing, polymeric bottom layer.

The system contains the highest concentration of silicon in its top layer, allowing for very high differential etch transfer into the polymeric bottom layer. An aspect ratio of 10 to 1 can easily be obtained using conventional etching systems. The silicon-rich imaging top layer provides the user with a significant degree of newfound resolution within a wide process window.

Shipley’s top layer materials, SR2400 Series resists, are available in a variety of dilutions for specific customer requirements. Conventional exposure equipment can be used for imaging the SiBER bilayer system, but the newest step-and-scan DUV systems will provide device fabricators with increased resolution and process window benefits beyond those of conventional step-and-scan tools.

The AR2450 Series bottom-layer material is also available in a variety of dilutions to meet user requirements. The bottom layer provides planar defect-free coatings on the wafer surface while simultaneously offering a chemically matched surface well suited to application of the silicon-rich, top-imaging layer resist. Unwanted reflected light energy is suppressed by this layer, allowing for the highest feature resolution and critical dimension control of the top layer image.


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