July 22, 2002 – Santa Clara, CA – Applied Materials’ Endura iCuB/S integrated Cu barrier/seed system deposits the critical barrier and seed layers in 65nm-generation (and beyond) copper interconnects.

Using new ALD technology, iCuB/S makes possible an ultrathin, conformal tantalum nitride (TaN) barrier layer that is compatible with advanced low-k dielectric films.

The TaN barrier layer is critical to achieving reliable copper structures. Tighter geometries of the 65nm node require that the barrier layer be exceptionally thin to maintain low interconnect resistivity while also providing good barrier properties and good dielectric-to-metal integrity.

ALD technology, which deposits a single atomic layer at a time, enables such ultrathin layers with uniform coverage on small, 65nm features.

The Endura iCuB/S system’s TaN chamber deposits an ultra-thin barrier layer with virtually 100% side and bottom coverage. In addition to providing a superior interface with the PVD seed layer, the ALD TaN film is an effective barrier for integration with advanced low-k dielectrics.