Silicon etch system

Nov. 6, 2002 – Fremont, CA – Lam Research Corp.’s 2300 Versys Star system, for 200mm and 300mm applications, builds on the 2300 Versys, expanding process capability for etching the complex structures required for sub-90nm applications.

The new system introduces technologies for rapid control of temperature and gas flow step-by-step across the wafer surface, meeting next-generation CD uniformity requirements. For a typical gate etch process, applying these new tuning capabilities reduces CD variation by as much as 50%.

The 2300 Versys Star enables in situ etching of complex film stacks, such as resist trim followed by antireflective coating and hardmask open over dual-doped polysilicon gate, as well as shallow trench isolation etch.

The system’s new capabilities for rapid tuning of wafer temperature and gas flow offer flexibility and step-by-step uniformity control to optimize each layer of the complex stack, delivering enhanced performance and productivity.


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