ETEC wins DARPA funding for litho project

July 14, 2003 – ETEC Systems, Hayward, CA, has been awarded a three-year, $13.5 million contract by the Defense Advanced Research Projects Agency (DARPA) to develop sub-45nm lithography systems.

Under the deal, ETEC will work to develop a raster multiple-beam prototype system for 45nm-pattern generation for mask and direct-write lithography applications, with demonstrated extendibility down to 32nm. The overall pricetag on the cost-sharing deal could be worth $32.3 million.


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