UMC, HBA achieve 90nm for SRAM

July 3, 2003 – UMC, Hsinchu, Taiwan, and High Bandwidth Access Inc. (HBA), a developer of memory devices, have successfully prototyped HBA’s high-speed IC based on the foundry’s 90nm process. Volume production is expected later this year.

The 90nm design will greatly increase HBA’s revenues from SRAM sales to the billion-dollar telecom and data communications market, said HBA chairman and CEO Steven Huang.


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