NVE gets memorable DARPA grant

Aug. 7, 2003 — The Defense Advanced Research Projects Agency (DARPA) awarded a $750,000 contract to NVE Corp. of Eden Prairie, Minn., for continued development of magnetic random access memory (MRAM), according to a news release.

The two-year contract involves work on magnetothermal MRAM, which combines magnetic fields and ultrafast heating from electrical currents to shrink cell size and reduce energy required to write data. The company said the contract boosts the firm’s intellectual property in the area, as well as the promise of MRAM some day supplanting dynamic random access memory — the most common semiconductor memory type.

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